Advances in Photochemistry - download pdf or read online

By David H. Volman, George S. Hammond, Klaus Gollnick

ISBN-10: 0471815241

ISBN-13: 9780471815242

Content material: Spin-statistical elements in diffusion-controlled reactions / Jack Saltiel and Beauford W. Atwater -- Photochemistry and molecular movement in stable amorphous polymers / James Guillet -- Photochemistry of straightforward olefins: chemistry of digital excited states or scorching floor states? / man J. Collin -- The decomposition of alkyl nitrites and the reactions of alkoxyl radicals / Julian P. Heicklen -- Photchemistry in surfactant strategies / Günther von Bünau and Thomas Wolff

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Springer-Verlag, Berlin). Ramaker, D. , C. T. White, and J. S. Murday, 1981, J. Vac. Sci. Technol. 18, 748. Ramaker, D. , C. T. White, and J. S. Murday, 1982, Phys. Lett. 89A, 211. Rosenberg, R. , V. Rehn, V. Jones, A. K. Green, C. C. Parks, G. Loubriel, and R. H. Stulen, 1981, Chem. Phys. Lett. 80, 488. Rosenberg, R. , P. R. LaRoe, V. Rehn, J. Stohr, R. Jaeger, and C. C. Parks, 1983, Phys. Rev. B28, 3026. Rosenberg, R. A,, P. J. Love, P. R. LaRoe, V. Rehn, and C. C. Parks, 1985, Phys. Rev. B31,2634.

This quenching effect is an asset because usually the etching process is used to remove an SiO, film and minimal silicon loss is desirable. The depth profiles reveal that the etching of SiO, is mainly a surface reaction, CHEMISTRY INDUCED BY CORE ELECTRON EXCITATION 31 the edges are sharp, while the etching of Si occurs over ia broad area, which means that gas-phase excitation is dominant. The SiO, etching rate also decreases with increasing temperature, indicating that this reaction is radiation-induced and not thermal.

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Advances in Photochemistry by David H. Volman, George S. Hammond, Klaus Gollnick

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