Advances in Chemical Physics, Vol. 77 by Ilya Prigogine, Stuart A. Rice PDF

By Ilya Prigogine, Stuart A. Rice

ISBN-10: 0471516090

ISBN-13: 9780471516095

This sequence is dedicated to supporting the reader receive basic information regarding a wide selection of subject matters in chemical physics, the sphere of which the editors interpret very widely. The motive is to have specialists current accomplished analyses of matters of curiosity and to inspire the expression of person issues of view. The editors desire that this method of the presentation of an outline of a subject matter will either stimulate new learn and function a personalised studying textual content for newcomers within the box.

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Phys. 83,2053. Freund, H. J. and C. M. Liegener, 1987, Chem. Phys. Lett. 134,70. , S. Svensson, H. Siegbahn, E. Basiliev, A. Faxalv, and K. Siegbahn, 1974, Chem. Phys. Lett. 28, 1. Haak, H. , G. A. Sawatzky, L. Ungier, J. K. Gimzewski, and T. D. Thomas, 1984, Rev. Sci. Instrum. 55,696. Hanson, D. , R. Stochbauer, and T. E. Madey, 1982, J. Chem. Phys. 77, 1569. Hanson, D. , S. L. Anderson, M. C. Nelson, G. P. Williams, and N. Lucas, 1985, J. Phys. Chem. 89,2235. Hayes, R. , 1987, J. Chem. Phys. 86, 1683.

Springer-Verlag, Berlin). Ramaker, D. , C. T. White, and J. S. Murday, 1981, J. Vac. Sci. Technol. 18, 748. Ramaker, D. , C. T. White, and J. S. Murday, 1982, Phys. Lett. 89A, 211. Rosenberg, R. , V. Rehn, V. Jones, A. K. Green, C. C. Parks, G. Loubriel, and R. H. Stulen, 1981, Chem. Phys. Lett. 80, 488. Rosenberg, R. , P. R. LaRoe, V. Rehn, J. Stohr, R. Jaeger, and C. C. Parks, 1983, Phys. Rev. B28, 3026. Rosenberg, R. A,, P. J. Love, P. R. LaRoe, V. Rehn, and C. C. Parks, 1985, Phys. Rev. B31,2634.

This quenching effect is an asset because usually the etching process is used to remove an SiO, film and minimal silicon loss is desirable. The depth profiles reveal that the etching of SiO, is mainly a surface reaction, CHEMISTRY INDUCED BY CORE ELECTRON EXCITATION 31 the edges are sharp, while the etching of Si occurs over ia broad area, which means that gas-phase excitation is dominant. The SiO, etching rate also decreases with increasing temperature, indicating that this reaction is radiation-induced and not thermal.

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Advances in Chemical Physics, Vol. 77 by Ilya Prigogine, Stuart A. Rice

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